GATE EC 2016 Set 3 — Question 20
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Electronic Devices → P-N Junction & Diodes → Built-In Potential
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Question
The I-V characteristics of three types of diodes at the room temperature, made of semiconductors X, Y and Z, are shown in the figure. Assume that the diodes are uniformly doped and identical in all respects except their materials. If , and are the band gaps of X, Y and Z, respectively, then
Correct answer
(C) E_(gX) < E_(gY) < E_(gZ)
Solution
The turn-on voltage () of a p-n junction diode is approximately proportional to the band gap () of the semiconductor material for similar doping levels. From the given I-V characteristics, the turn-on voltages follow the order . Therefore, the band gaps must follow the same order: .
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