GATE EC 2016 Set 3 — Question 21
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Electronic Devices → MOS Capacitor & MOSFET → MOS Capacitor (Accum, Depl, Inv)
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Question
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in
Correct answer
(A) inversion
Solution
Bulk (right side): the Fermi level lies between and , a distance above , so the substrate is n-type.Surface (at the SiO interface): all bands bend upward towards the oxide. rises above , and the figure marks the surface separation as , the same as the bulk separation . The total band bending is therefore .For an n-type semiconductor:
- bands bending down (more electrons) → accumulation;
- bands bending up with still below → depletion;
- crossing above → inversion (holes become the majority at the surface). A surface bending of is the standard onset of strong inversion.
- (B) would need downward bending; (C) would need to stay below ; (D) would need flat bands.
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